Could your FPGA lose its configuration?

SRAM cells are susceptible to neutron-induced errors, where they change state in an unpredictable and uncontrollable way. Since SRAM cells are used to control the configuration of SRAM-based FPGAs, a neutron-induced error could result in an unpredictable change in functionality of an SRAM-based FPGA.

For the first time, an independent and comprehensive report, from industry neutron-effects experts iRoC Technologies, has determined that SRAM-based FPGAs are susceptible to functional failure when exposed to neutron radiation. Failure rates are significant even when exposed to the naturally-occurring background neutron radiation present at ground level. This report also has determined that Antifuse- and Flash-based FPGAs are immune to the effects of neutron radiation. A neutron-induced functional failure in an SRAM-based FPGA could result in a complete system failure

Follow the links to find out more about neutron-induced errors:

• Technical Information
• Glossary
• Articles
  • Industry Report Sheds Light on FPGA Reliability
  • Solutions for Soft Errors in System on Chip Designs
  • Radiation Threatens Avionics as Chip Geometries Shrink
• Firm Errors in the Media
  • Soft Errors Become Hard Truth for Logic
  • Neutron Storm Swirls Around FPGA Reliability

 

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